1 of 10 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enablin g wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . ordering information rf in vgq pin 1 (cut) rf out vdq pin 2 gnd base RFHA1023 225w gan wide-band pulsed power amplifier the RFHA1023 is a 36v 225w high power discrete amplifier designed for l-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single pack- age. the RFHA1023 is a matched power transistor packaged in a hermetic, flanged ceramic package. the package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. features wideband operation: 1.2ghz to 1.4ghz advanced gan hemt technology advanced heat sink technology optimized evaluation board layout for 50 operation integrated matching components for high terminal impedances 36v operation typical performance: output pulsed power: 225w pulse width: 1ms, duty cycle 10 % small signal gain: 15db high efficiency (55%) - 40c to 85c operating temperature applications radar air traffic control and surveillance general purpose broadband amplifiers RFHA1023 225w gan wide-band pulsed RFHA1023pcba-410 fully assembled evaluation board optimized for 1.2ghz to 1.4ghz; 36v ds110630 package: flanged ceramic, 2 pin www.datasheet.co.kr datasheet pdf - http://www..net/
2 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g )-8 to +2v gate current (i g )155ma operational voltage 40 v ruggedness (vswr) 10:1 storage temperature range -55 to +125 c operating temperature range (t c )-40 to +85 c operating junction temperature (t j )200 c human body model class 1a mttf (t j < 200 c, 95% confidence limits)* 3e + 06 hours thermal resistance, r th (junction to case): t c =85 c, dc bias only 0.90 c/w t c = 85 c, 100s pulse, 10% duty cycle 0.30 c/w * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the dev ice voltage and current must not exceed the maximum operating values. bias conditions should also satisfy the following expression: p diss <(t j -t c )/r th j-c and t c =t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )36v gate voltage (v gsq ) -8-3-2v drain bias current 440 ma frequency of operation 1200 1400 mhz dc functional test i g (off) C gate leakage 2 ma v g =-8v, v d =0v i d (off) C drain leakage 2 ma v g =-8v, v d =50v v gs (th) C threshold voltage -3.4 v v d =36v, i d =20ma v ds (on) C drain voltage at high current 0.22 v v g =0v, i d =1.5a rf functional test [1], [2] small signal gain 14 db f=1200mhz, p in =30dbm power gain 11.8 db f=1200mhz, p in =41.2dbm input return loss -6 db f=1200mhz, p in =30dbm output power 53 53.25 dbm f=1200mhz, p in =41.2dbm drain efficiency 48 50 % f=1200mhz, p in =41.2dbm c a u t i o n ! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. www.datasheet.co.kr datasheet pdf - http://www..net/
3 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . parameter specification unit condition min. typ. max. rf functional test (continued) [1], [2] small signal gain 15 db f=1300mhz, p in =30dbm power gain 12.3 db f=1300mhz, p in =41.2dbm input return loss -6 db f=1300mhz, p in =30dbm output power 53 53.5 dbm f=1300mhz, p in =41.2dbm drain efficiency 50 58 % f=1300mhz, p in =41.2dbm small signal gain 14 db f=1400mhz, p in =30dbm power gain 11.8 db f=1400mhz, p in =41.2dbm input return loss -6 db f=1400mhz, p in =30dbm output power 53 53.25 dbm f=1400mhz, p in =41.2dbm drain efficiency 55 63 % f=1400mhz, p in =41.2dbm rf typical performance [1], [2] frequency range 1200 1400 mhz small signal gain 15 db f=1300mhz, p in =30dbm power gain 12.3 db f=1300mhz, p out =53.5dbm gain variation with temperature -0.015 db/c at peak output power output power (p sat ) 53.52 dbm peak output power 225 w peak output power drain efficiency 58 % at peak output power [1] test conditions: pw=1ms, dc=10%, v dsq =36v, i dq =440ma, t=25c. [2] performance in a standard tuned test fixture. www.datasheet.co.kr datasheet pdf - http://www..net/
4 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . typical performance in standard fixed tune test fixture (t=25c, unless otherwise noted) 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 gain (db) output power (dbm) gain vs. output power (f = 1300mhz) (pulsed 10% duty cycle, 1ms, vd = 36v, idq = 440ma) gain 85c gain 25c gain -40c 10 20 30 40 50 60 70 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 drain e?ciency (%) output power (dbm) e?ciency vs. output power (f = 1300mhz) (pulsed 10% duty cycle, 1ms, vd = 36v, idq = 440ma) e? 85c e? 25c e? -40c -19 -17 -15 -13 -11 -9 -7 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 irl, input return loss (db) output power (dbm) input return loss vs. output power (f = 1300mhz) (pulsed 10% duty cycle, 1ms, vd = 36v, idq = 440ma) irl 85c irl 25c irl -40c -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 8 9 10 11 12 13 14 15 16 17 18 1200 1220 1240 1260 1280 1300 1320 1340 1360 1380 1400 input return loss (db) gain (db) frequency (mhz) small signal performance vs. frequency, pout = 44dbm (pulsed 10% duty cycle,1ms,vd = 36v, idq = 440ma) gain irl fixed tuned test circuit -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 11 11.5 12 12.5 13 13.5 14 14.5 1200 1220 1240 1260 1280 1300 1320 1340 1360 1380 1400 input return loss (db) gain (db) frequency (mhz) gain/irl vs. frequency, pout = 53.5dbm (pulsed 10% duty cylce, 1ms, vd = 36v, idq = 440ma) gain irl fixed tuned test circuit 50 51 52 53 54 55 56 57 58 59 60 61 62 1200 1220 1240 1260 1280 1300 1320 1340 1360 1380 1400 drain e?ciency (%) frequency (mhz) drain e?ciency vs. frequency, pout = 53.5dbm (pulsed 10% duty cycle, 1ms, vd = 36v, idq = 440ma) e? fixed tuned test circuit www.datasheet.co.kr datasheet pdf - http://www..net/
5 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . 0 10 20 30 40 50 60 70 11 12 13 14 15 16 17 18 46 47 48 49 50 51 52 53 54 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 1300mhz (pulsed 10% duty cycle, 1ms, vd = 36v, idq = 440ma) gain drain e? 45 47.5 50 52.5 55 57.5 60 62.5 65 200 225 250 275 300 0 0 0 1 0 0 1 0 1 drain e?ciency(%) pout (w) pulse width (usec) pout/de vs. pulse width, f = 1300mhz (pulsed 10% duty cycle, vd = 36v, idq = 440ma) pout drain e?ciency 45 47.5 50 52.5 55 57.5 60 62.5 65 200 225 250 275 300 10 30 50 70 drain e?ciency(%) pout (w) duty cycle (%) pout/de vs. duty cycle, f = 1300mhz (pulsed ,1ms pulse, vd = 36v, idq = 440ma) pout e? www.datasheet.co.kr datasheet pdf - http://www..net/
6 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . package drawing p i n f u n c t i o n d e s c r i p t i o n 1 gate gate - vg rf output 2 drain drain - vd rf output 3 source source - ground base www.datasheet.co.kr datasheet pdf - http://www..net/
7 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . bias instruction for RFHA1023 evaluation board esd sensitive material. please use proper esd precautions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering up the evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure that both the vg and vd grounds are also connected to this ground supply terminal. 3. apply -8v to vg. 4. apply 36v to vd. 5. increase vg until drain current reaches 440ma or desired bias point. 6. turn on the rf input. important note: depletion mode device; when biasing the device, vg must be applied before vd. when removing bias, vd must be removed before vg is removed. failure to follow this sequence will cause the device to fail. note: for optimal rf performance, consistent and optimal heat removal from the base of the package is required. a thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. it is recom- mended that a small amount of thermal grease is applied to the underside of the device package. even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. the package should then be bolted to the chassis and input and output leads soldered to the circuit board www.datasheet.co.kr datasheet pdf - http://www..net/
8 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . evaluation board schematic evaluation board bill of materials c o m p o n e n t v a l u e m a n u f a c t u r e r p a r t n u m b e r r1, r4 10 panasonic erj-8geyj100v r2 0 panasonic erj-8gey0r00 r3 51 panasonic erj-8geyj510 c1, c2, c11, c12 150pf dielectric labs c11cf151j-9zn-x0v c17 56pf atc atc800a560jt c5 0.1 f panasonic ecj-2vb1h104k c6, c15 10000pf panasonic ecj-2vb1h103k c16 0.1 f panasonic ecj-2vb1h104k c8, c18 10 f panasonic eca-2am100 c20 3.3pf atc atc100b3r3bt c21 1.5pf atc atc100b1r5bt c22 0.3pf atc atc100b0r3bt l1, l2 68nh coilcraft 1812sms-68njlb l20, l21 115 , 10a steward 28f0181-1sr-10 l22, l23 75 , 10a steward 35f0121-1sr-10 c3, c4, c7, c13, c14, c19 not populated www.datasheet.co.kr datasheet pdf - http://www..net/
9 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . evaluation board layout device impedances note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linear performance across the entire frequency bandwidth. f r e q u e n c y z s o u r c e ( ) z l o a d ( 1200mhz 12.98 - j8.23 25.48 - j12.4 1300mhz 11.75 - j7.16 24.6 - j12.9 1400mhz 10.41 - j5.98 23.4 - j13.4 www.datasheet.co.kr datasheet pdf - http://www..net/
10 of 10 RFHA1023 ds110630 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at ( ( + 1 ) 3 3 6 - 6 7 8 - 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . d e v i c e h a n d l i n g / e n v i r o n m e n t a l c o n d i t i o n s gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. g a n h e m t c a p a c i t a n c e s the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist acro ss all three terminals of the device. the physical manufactured characteristics of the device determine the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages are varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = -8v) and zero volts applied to the drain. during the measurement process, the parasitic capaci tances of the package that holds the am plifier is removed through a calibration step. any internal matching is included in the te rminal capacitance measurements. the capacitance values pre- sented in the typical characteristics table of the device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as fol- lows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd d c b i a s the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be taken to a potential lower than the source voltage to pinch off the devi ce prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. the recom- mended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best represent the operational character istics for this device, cons idering manufacturing variatio ns and expected performance. the user may choose alternate conditions for biasing this device based on performance tradeoffs. m o u n t i n g a n d t h e r m a l c o n s i d e r a t i o n s the thermal resistance provided as r th (junction to case) rep resents only the packaged device thermal charac- teristics. this is measured using ir microscopy capturing the device under test temperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. knowing the dissipated power at the time of th e measurement, the therma l resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the maximum of 200c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mecha- nisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device. www.datasheet.co.kr datasheet pdf - http://www..net/
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